Memory device and manufacturing method the same

ABSTRACT

A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device capable oftransmitting and receiving data and a driving method thereof.

Note that the term “semiconductor device” used in this specificationrefers to a device in general that can operate by utilizingsemiconductor characteristics, and an electro-optical device, asemiconductor circuit, and an electronic device are all included in thesemiconductor device.

2. Description of the Related Art

In recent years, a semiconductor device that transmits and receives datawithout contact using an electromagnetic field or an electric wave hasbeen developed. Such a semiconductor device is called an RF (RadioFrequency) tag, a wireless tag, an electronic tag, a transponder, or thelike. Most semiconductor devices currently in practical use havecircuits each using a semiconductor substrate (such a circuit is alsoreferred to as an IC (Integrated Circuit) chip) and antennas. In the ICchip, a memory and a control circuit are incorporated.

Although a semiconductor device that can transmit and receive datawithout contact is popular partly as some railway passes, electronicmoney cards, and the like, it has been a prime task to provide aninexpensive semiconductor device for further popularization.

SUMMARY OF THE INVENTION

In view of the above current conditions, it is an object of the presentinvention to provide a semiconductor device including a memory with asimple structure for providing an inexpensive semiconductor device and amanufacturing method thereof.

It is another object of the invention to reduce the number of steps in amanufacturing method of a semiconductor device including a memory.

One feature of the invention is a memory device including a layercontaining an organic compound, in which a source electrode or a drainelectrode of a TFT provided in the memory device is used as a conductivelayer forming a bit line of the memory device. Compared to a structurein which a source electrode or a drain electrode of a TFT is connectedto a conductive layer of a memory device through a connection electrode,the present invention, in which a source electrode or a drain electrodeof a TFT and a bit line of a memory device are formed with one wire, canreduce contact resistance and wiring resistance. Therefore, the presentinvention can reduce power consumption of a semiconductor device.

Another feature is that the source electrode or drain electrode of theTFT provided in the memory element portion is processed by etching intothe conductive layer which forms the bit line of the memory device.

A constitution of the invention disclosed in this specification is amemory device, as one example thereof is shown in FIG. 1, includes a bitline extending in a first direction; a word line extending in a seconddirection perpendicular to the first direction; and a memory cellincluding a memory element, the memory element includes a laminatedstructure of a conductive layer forming the bit line, an organiccompound layer, and a conductive layer forming the word line, and theconductive layer forming the bit line is an electrode in contact with asemiconductor layer of a thin film transistor.

Another constitution of the invention is a memory device, as one examplethereof is shown in FIG. 2, includes a bit line extending in a firstdirection; a word line extending in a second direction perpendicular tothe first direction; and a memory cell including a memory element, thememory element includes a laminated structure of a conductive layerforming the bit line, an organic compound layer, and a conductive layerforming the word line, the conductive layer forming the bit line is anelectrode in contact with a semiconductor layer of a thin filmtransistor, and the conductive layer forming the bit line includes afirst region where two metal films are laminated and a second regionwhere three metal films are laminated.

Another constitution of the invention is a memory device, as one examplethereof is shown in FIG. 3, includes a bit line extending in a firstdirection; a word line extending in a second direction perpendicular tothe first direction; and a memory cell including a memory element, thememory element includes a laminated structure of a conductive layerforming the bit line, an organic compound layer, and a conductive layerforming the word line, the conductive layer forming the bit line is anelectrode in contact with a semiconductor layer of a thin filmtransistor, and the conductive layer forming the bit line includes afirst region including a single metal film and a second region wherethree metal films are laminated.

Another constitution of the invention is a memory device, as one examplethereof is shown in FIG. 4, includes a bit line extending in a firstdirection; a word line extending in a second direction perpendicular tothe first direction; and a memory cell including a memory element, thememory element includes a laminated structure of a conductive layerforming the bit line, an organic compound layer, and a conductive layerforming the word line, the conductive layer forming the bit line is anelectrode in contact with a semiconductor layer of a thin filmtransistor, and the conductive layer forming the bit line includes afirst region two metal films are laminated, a second region where threemetal films are laminated, and a boundary between the first region andthe second region is covered with an insulating film.

Another constitution of the invention is a memory device includes a bitline extending in a first direction; a word line extending in a seconddirection perpendicular to the first direction; and a memory cellincluding a memory element, the memory element includes a laminatedstructure of a conductive layer forming the bit line, an organiccompound layer, and a conductive layer forming the word line, theconductive layer forming the bit line is an electrode in contact with asemiconductor layer of a thin film transistor, the conductive layerforming the bit line includes a first region including a single metalfilm and a second region three metal films are laminated, and a boundarybetween the first region and the second region is covered with aninsulating film.

In each of the above constitutions, the conductive layer forming the bitline is a single-layer film of an element selected from Ti, Al, Ag, Ni,W, Ta, Nb, Cr, Pt, Zn, Sn, In, and Mo, or an alloy or compound materialcontaining the above element as its main component, or a laminated filmthereof.

In each of the above constitutions, either or both the conductive layerforming the bit line and the conductive layer forming the word line mayinclude a light transmitting property. In addition, the thin filmtransistor may be an organic transistor.

In each of the above constitutions, an element including a rectifyingproperty may be provided between the conductive layer forming the bitline and the organic compound layer or between the organic compoundlayer and the conductive layer forming the word line. Note that, as theelement having a rectifying property, a thin film transistor, a diode,or the like whose gate electrode and drain electrode are connected toeach other can be used.

In each of the above constitutions, a buffer layer or an organiccompound layer is provided in contact with the first region of theconductive layer forming the bit line.

In each of the above constitutions, the memory device is to furtherinclude a control circuit for controlling the memory element, and anantenna.

In addition, a method for manufacturing a memory device is also one ofthe present invention. The method for manufacturing a memory deviceincluding a bit line extending in a first direction, a word lineextending in a second direction perpendicular to the first direction,and a memory cell including a memory element, the method comprises:forming a bit line including laminated metal layers; forming aninsulating film covering at least an end portion of the bit line;thinning a part of the bit line by etching using the insulating film asa mask, thereby forming a depression in the bit line, the depressionhaving a slanted side surface; forming a layer containing an organiccompound over the insulating film and the depression; and forming a wordline over the layer containing the organic compound.

In addition, another method for manufacturing a memory device is amethod for manufacturing a memory device including a bit line extendingin a first direction, a word line extending in a second directionperpendicular to the first direction, and a memory cell including amemory element, the method comprises: forming a thin film transistorincluding a semiconductor layer; forming an insulating film covering thethin film transistor; forming an electrode including laminated metallayers in contact with the semiconductor layer, over the insulatingfilm; removing a part of the electrode, thereby forming a first regionand a second region wherein a number of laminated metal layers in thesecond region is larger than that in the first region; forming aninsulating film covering the second region of the electrode and aboundary between the first and second regions; forming a buffer layerover the first region; forming a layer containing an organic compoundover the buffer layer; and forming a word line over the layer containingthe organic compound.

The present invention can reduce the number of steps in a method formanufacturing a semiconductor device including an active matrix typememory device.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view showing Embodiment Mode 1.

FIG. 2 is a cross-sectional view showing Embodiment Mode 2.

FIG. 3 is a cross-sectional view showing Embodiment Mode 3.

FIG. 4 is a cross-sectional view showing Embodiment Mode 4.

FIG. 5 is a cross-sectional view showing Embodiment Mode 5.

FIGS. 6A and 6B are top views of an active matrix organic memory device(Embodiment Mode 6).

FIG. 7 is a cross-sectional view of a semiconductor device including anorganic memory device and an antenna (Embodiment Mode 7).

FIGS. 8A to 8C are a block diagram of a wireless chip and diagramsshowing usage examples of a wireless chip.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiment modes of the present invention are explainedwith reference to the drawings. However, the invention can be carriedout in many different modes. As is easily known to a person skilled inthe art, the mode and the detail of the invention can be variouslychanged without departing from the spirit and the scope of theinvention. Thus, the present invention is not interpreted while limitingto the following description of the embodiment modes. Note that the samereference numeral is used to denote the same portion or a portion havinga similar function among the drawings shown below, and repetitivedescription thereof is omitted.

Embodiment Mode 1

FIG. 1 is a cross-sectional view of one example of a semiconductordevice of the present invention, specifically, a memory device includinga plurality of memory element each of which includes an organic compoundlayer are arranged (such a device is hereinafter also referred to as anorganic memory or an organic memory device).

In FIG. 1, a TFT (n-channel TFT or p-channel TFT) provided over asubstrate 10 having an insulating surface is an element for controllinga current flowing to an organic compound layer 20 b of a memory cell,and reference numerals 13 and 14 denote source or drain regions.

A base insulating film 11 (here, a lower layer thereof is a nitrideinsulating film and an upper layer thereof is an oxide insulating film)is formed over the substrate 10, and a gate insulating film 12 isprovided between a gate electrode 15 and a semiconductor layer. Inaddition, a side face of the gate electrode 15 is provided with asidewall 22. Further, a reference numeral 16 denotes an interlayerinsulating film formed with a single layer of an inorganic material suchas silicon oxide, silicon nitride, silicon nitride oxide, aluminumnitride, or aluminum nitride oxide, or a laminated layer thereof.Although not shown here, one memory cell may be provided with one ormore TFTs (n-channel TFT or p-channel TFT) in addition to the TFT shownin the diagram. Moreover, although a TFT including one channel formationregion is shown here, there is no particular limitation. A TFT includinga plurality of channel formation regions may be employed.

As shown in FIG. 1, a lightly doped drain (LDD) structure, whichincludes LDD regions 23 and 24 between the channel formation region andthe source or drain regions, may be employed. In this structure, aregion to which an impurity element is added in low concentration isprovided between the channel formation region and the source or drainregions formed by adding an impurity element in high concentration. Thisregion is referred to as an LDD region.

Reference numerals 18 a to 18 c denote layers included in a firstelectrode layer, in other words, a conductive layer forming a bit lineof the memory element. The first electrode layer has a three-layerstructure. Here, a titanium film as the conductive layer 18 a, a filmcontaining aluminum as its main component as the layer 18 b, and atitanium film as the layer 18 c are sequentially laminated. It ispreferable to use a titanium film as the layer 18 a which is in contactwith the source or drain region because contact resistance can bereduced. A film containing aluminum as its main component has lowelectrical resistance; therefore, it has the advantage of being able toreduce resistance of the entire wiring when having the largest thicknessin the three-layer structure. In addition, a film containing aluminum asits main component is easy to be oxidized and to generate a projectingportion such as a hillock when subjected to heat or the like in asubsequent step. Therefore, a titanium film is preferably laminated toprevent oxidation and formation of a projecting portion. A filmcontaining aluminum as its main component becomes an insulating filmwhen oxidized, whereas a titanium film has a semiconductor property evenwhen oxidized. Therefore, a titanium film can suppress an increase inelectrical resistance as compared to a film containing aluminum as itsmain component. Considering these points, the titanium film as the layer18 a, the film containing aluminum as its main component as the layer 18b, and the titanium film as the layer 18 c are preferably formedcontinuously without exposure to the atmosphere.

In addition, a source line including layers 17 a to 17 c is also formedwith the same laminated structure (three layers in total). The laminatedstructure (three layers in total) includes a film containing aluminum asits main component, which can serve as a low-resistance wire, and aconnection wire including layers 25 a to 25 c of a connection portion isalso formed at the same time.

In addition to the TFTs arranged in the memory element portion, a drivercircuit for controlling operation of the memory element portion can alsobe formed. Further, a lead wiring of the driver circuit can also beformed with the same laminated structure (three layers in total), sothat the driver circuit can be formed with a low-resistance wiring. Byforming the driver circuit with a low-resistance wiring, powerconsumption of the driver circuit can be reduced. The driver circuit forcontrolling operation of the memory element portion is, for example, adecoder, a sense amplifier, a selector, a buffer, a read circuit, awrite circuit, or the like.

An insulating film 19 is provided between memory cells. The insulatingfilm 19 is provided at the boundary between adjacent memory cells tosurround and cover the periphery of the first electrode layer includingthe layers 18 a to 18 c. As the insulating film 19, a single-layerstructure of an inorganic material containing oxygen or nitrogen, suchas silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), siliconoxynitride (SiO_(x)N_(Y)) (X>Y), or silicon nitride oxide (SiN_(X)O_(Y))(X>Y), or the like or a laminated structure thereof can be used.Alternatively, the insulating film 19 is formed to have a single-layeror laminated structure with an organic material such as polyimide,polyamide, polyvinylphenol, benzocyclobutene, acryl, or epoxy, or thelike. Further, it may be formed with a laminate of an inorganic materialand an organic material.

For a second electrode layer 21, a single-layer or laminated structureof an element selected from gold (Au), silver (Ag), platinum (Pt),nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe),cobalt (Co), copper (Cu), palladium (Pd), carbon (C), aluminum (Al),manganese (Mn), titanium (Ti), and tantalum (Ta) or an alloy containinga plurality of the elements can be used.

In addition, a laminated layer containing an organic compound (alaminated layer of a first layer (buffer layer 20 a) and a second layer(organic compound layer 20 b)) is provided between the first electrodelayer including the layers 18 a to 18 c and the second electrode layer21.

The buffer layer 20 a is a composite layer of an organic compound and aninorganic compound which can exhibits an electron accepting property tothe organic compound, specifically, a composite layer containing metaloxide and an organic compound. The buffer layer can also provideexcellent conductivity in addition to an effect such as improvement inheat resistance, which is thought to be obtained by mixing an inorganiccompound.

Specifically, the buffer layer 20 a is a composite layer containingmetal oxide (such as molybdenum oxide, tungsten oxide, or rhenium oxide)and an organic compound (such as a material having a hole transportproperty (for example, 4,4′-bis[N-(3-methyphenyl)-N-phenylamino]biphenyl(abbr.: TPD), 4,4′-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbr.:α-NPD), 4,4′-{N-[4-(N,N-di-m-tolylamino)phenyl]-N-phenylamino}biphenyl(abbr.: DNTPD), or the like)).

By providing the buffer layer on the first electrode layer, a distancebetween a third layer of the first electrode layer and the secondelectrode layer in a memory element can be increased, and initialfailure due to a short circuit of the memory element caused by surfaceunevenness of a metal electrode, or the like can be suppressed.

The organic compound layer 20 b as the second layer is formed with asingle-layer or laminated layers of a layer formed of an organiccompound material having conductivity. As a specific example of theorganic compound material having conductivity, a material having acarrier transport property can be used.

In the case where the third layer of the first electrode layer and thesecond layer 20 b have poor adhesion to each other, the buffer layer canimprove adhesion when provided therebetween. Since the buffer layer isthe composite layer containing metal oxide and an organic compound, ithas good adhesion to both the first electrode layer which is formed ofmetal and the second layer which is formed of an organic compound.

Although explanation is made here taking a top-gate TFT as an example,the invention can be applied regardless of a TFT structure, for example,to a bottom-gate (inverted staggered) TFT and a staggered TFT. Moreover,the invention is not limited to a TFT having a single-gate structure,and a multi-gate TFT having a plurality of channel formation regions,for example, a double-gate TFT may also be employed.

In this specification, a semiconductor film containing silicon as itsmain component, a semiconductor film containing an organic material asits main component, or a semiconductor film containing metal oxide asits main component can be used as the semiconductor layer serving as anactive layer of the TFT. As the semiconductor film containing silicon asits main component, an amorphous semiconductor film, a semiconductorfilm having a crystalline structure, a compound semiconductor filmhaving an amorphous structure, or the like can be used. Specifically,amorphous silicon, microcrystalline silicon, polycrystalline silicon, orthe like can be used for the semiconductor film containing silicon asits main component. As the semiconductor film containing an organicmaterial as its main component, a semiconductor film containing, as itsmain component, a substance which includes a certain amount of carbon oran allotrope of carbon (excluding diamond), which is combined withanother element, can be used. Specifically, pentacene, tetracene, athiophen oligomer derivative, a phenylene derivative, a phthalocyaninecompound, a polyacetylene derivative, a polythiophene derivative, acyanine dye, or the like can be used. Further, as the semiconductor filmcontaining metal oxide as its main component, zinc oxide (ZnO); oxide ofzinc, gallium, and indium (In—Ga—Zn—O); or the like can be used.

Furthermore, transfer to a flexible substrate may be performed using apeeling technique. In that case, a TFT and a memory device aremanufactured after forming a peeling layer or a separation layer over afirst substrate such as a glass substrate. Then, the peeling layer orthe separation layer is removed, and the TFT and the memory devicepeeled off from the first substrate may be transferred to a secondsubstrate that is a flexible substrate.

Embodiment Mode 2

In this embodiment mode, an example of a memory device, which has adifferent structure from that in Embodiment Mode 1, is shown in FIG. 2.

The structure shown in FIG. 2 includes a first region where part of afirst electrode layer is thinner due to etching using an insulating film219 as a mask, and the first region is in contact with a laminated layercontaining an organic compound (a buffer layer 220 a and an organiccompound layer 220 b) of a memory cell. The insulating film 219 isprovided at the boundary between adjacent memory cells to surround andcover the periphery of the first electrode layer.

A first electrode layer including layers 218 a to 218 c is a conductivelayer forming a bit line of a memory element. The first electrode layerincluding the layers 218 a to 218 c has a first region with two layers218 a, 218 b, a second region with three layers 218 a to 218 c, and astep at the boundary between the first region and the second region.Here, a titanium film as the layer 218 a, a film containing aluminum asits main component as the layer 218 b, and a titanium film as the layer218 c are sequentially laminated.

In addition, a source line including layers 217 a to 217 c is alsoformed with the same laminated structure (three layers in total). Thelaminated structure (three layers in total) includes a film containingaluminum as its main component, which can serve as a low-resistancewiring, and a connection wiring including layers 225 a to 225 c of aconnection portion is also formed at the same time.

Note that in FIG. 2, a TFT (n-channel TFT or p-channel TFT) providedover a substrate 210 having an insulating surface is an element forcontrolling a current flowing to the organic compound layer 220 b of thememory cell, and reference numerals 213 and 214 denote source or drainregions. Further, the TFT shown in FIG. 2 has LDD regions 223 and 224between a channel formation region and the source or drain regions.

A base insulating film 211 (here, a lower layer thereof is a nitrideinsulating film and an upper layer thereof is an oxide insulating film)is formed over the substrate 210, and a gate insulating film 212 isprovided between a gate electrode 215 and a semiconductor layer. Inaddition, a side face of the gate electrode 215 is provided with asidewall 222. Further, a reference numeral 216 denotes an interlayerinsulating film formed with a single layer of an inorganic material suchas silicon oxide, silicon nitride, silicon nitride oxide, aluminumnitride, or aluminum nitride oxide, or a laminated layer thereof.

By providing the buffer layer 220 a on the first electrode layer, adistance between the first electrode layer and a second electrode layer221 in a memory element can be increased, and initial failure due to ashort circuit of the memory element caused by surface unevenness of ametal electrode, or the like can be suppressed. In the case where thesecond layer 218 b of the first electrode layer and the organic compoundlayer 220 b have poor adhesion to each other, the buffer layer 220 a canimprove adhesion when provided between these layers. In the structureshown in FIG. 2, the second layer 218 b of the first electrode layer andthe buffer layer 220 a are in contact with each other, and part of thefirst insulating layer 218 c is removed. With the structure in whichpart of the first electrode layer 218 c is removed and the filmcontaining aluminum as its main component and the buffer layer 220 a arein contact with each other, electrical resistance of a memory elementcan be reduced.

The organic compound layer 220 b which is the second layer is formedwith a single-layer or laminated structure of a layer formed of anorganic compound material having conductivity. As a specific example ofthe organic compound material having conductivity, a material having acarrier transport property can be used.

Note that if there is no particular necessity, the buffer layer 220 aneed not necessarily be provided.

In the case of the structure shown in FIG. 2, the second electrode layer221 is in contact with the second layer of the first electrode layer inthe connection portion. By using materials containing the same metalelement for their main components of the second electrode layer 221 andthe second layer of the first electrode layer, they can be connected toeach other with low contact resistance.

This embodiment mode can be freely combined with Embodiment Mode 1.

Embodiment Mode 3

In this embodiment mode, an example of a memory device, which has adifferent structure from those in Embodiment Modes 1 and 2, is shown inFIG. 3.

The structure shown in FIG. 3 includes a first region where part of afirst electrode layer is thinner due to etching using an insulating film319 as a mask, and the first region is in contact with a laminated layercontaining an organic compound (a buffer layer 320 a and an organiccompound layer 320 b) of a memory cell. The insulating film 319 isprovided at the boundary between adjacent memory cells to surround andcover the periphery of the first electrode layer.

A first electrode layer including layers 318 a to 318 c is a conductivelayer forming a bit line of a memory element. The first electrode layerincluding the layers 318 a to 318 c has a first region with a singlelayer, a second region with three layers, and a step at the boundarybetween the first region and the second region. Here, a titanium film asthe layer 318 a, a film containing aluminum as its main component as thelayer 318 b, and a titanium film as the layer 318 c are sequentiallylaminated.

In addition, a source line including layers 317 a to 317 c is alsoformed with the same laminated structure (three layers in total). Thelaminated structure (three layers in total) includes a film containingaluminum as its main component, which can serve as a low-resistancewire, and a connection wire including layers 325 a to 325 c of aconnection portion is also formed at the same time.

Note that in FIG. 3, a TFT (n-channel TFT or p-channel TFT) providedover a substrate 310 having an insulating surface is an element forcontrolling a current flowing to an organic compound layer 320 b of amemory cell, and reference numerals 313 and 314 denote source or drainregions. Further, the TFT shown in FIG. 3 has LDD regions 323 and 324between a channel formation region and the source or drain regions.

A base insulating film 311 (here, a lower layer thereof is a nitrideinsulating film and an upper layer thereof is an oxide insulating film)is formed over the substrate 310, and a gate insulating film 312 isprovided between a gate electrode 315 and a semiconductor layer. Inaddition, a side face of the gate electrode 315 is provided with asidewall 322. Further, a reference numeral 316 denotes an interlayerinsulating film formed with a single layer of an inorganic material suchas silicon oxide, silicon nitride, silicon nitride oxide, aluminumnitride, or aluminum nitride oxide, or a laminated layer thereof.

By providing the buffer layer 320 a on the first electrode layer, adistance between the first electrode layer and a second electrode layer321 in a memory element can be increased, and initial failure due to ashort circuit of the memory element caused by surface unevenness of ametal electrode, or the like can be suppressed.

The organic compound layer 320 b as the second layer is formed with asingle-layer or laminated structure of a layer formed of an organiccompound material having conductivity. As a specific example of theorganic compound material having conductivity, a material having acarrier transport property can be used.

Note that if there is no particular necessity, the buffer layer 320 aneed not necessarily be provided.

In the case of the structure shown in FIG. 3, the first layer 318 a ofthe first electrode layer can have a relatively flat surface since it isthinly formed over the flat interlayer insulating film 316. Therefore,initial failure due to a short circuit of the memory element caused bysurface unevenness of the metal electrode, or the like can besuppressed.

In the connection portion, the second electrode layer 321 and the firstlayer 325 a of the first electrode layer are in contact with each other,and a side face of a second layer 325 b is also in contact with thesecond electrode layer 321. By employing the structure shown in FIG. 3,a contact area in the connection portion can be increased.

This embodiment mode can be freely combined with Embodiment Mode 1.

Embodiment Mode 4

In this embodiment mode, an example of a memory device, which has astructure partly different from that in Embodiment Mode 2, is shown inFIG. 4.

An example of performing etching using an insulating film as a mask isdescribed in Embodiment Mode 2, whereas an example of performing etchingwith one more additional mask to remove part of a third layer of a firstelectrode layer is described in this embodiment mode.

The structure shown in FIG. 4 has a first region where part of the firstelectrode layer is thinner due to etching, and the first region is incontact with a laminated layer containing an organic compound (a bufferlayer 420 a and an organic compound layer 420 b) of a memory cell. Aninsulating film 419 is provided at the boundary between adjacent memorycells to surround and cover the periphery of the first electrode layer.

A first electrode layer including layers 418 a to 418 c is a conductivelayer forming a bit line of a memory element. The first electrode layerincluding the layers 418 a to 418 c has a first region with two layers418 a, 418 b, a second region with three layers 418 a to 418 c, and astep at the boundary between the first region and the second region.Here, a titanium film as the layer 418 a, a film containing aluminum asits main component as the layer 418 b, and a titanium film as the layer418 c are sequentially laminated.

In the structure shown in FIG. 4, the step at the boundary between thefirst region and the second region is also covered with the insulatingfilm 419.

In addition, a source line including layers 417 a to 417 c is alsoformed with the same laminated structure (three layers in total). Thelaminated structure (three layers in total) includes a film containingaluminum as its main component, which can serve as a low-resistancewiring, and a connection wiring including layers 425 a to 425 c of aconnection portion is also formed at the same time.

Note that in FIG. 4, a TFT (n-channel TFT or p-channel TFT) providedover a substrate 410 having an insulating surface is an element forcontrolling a current flowing to the organic compound layer 420 b of thememory cell, and reference numerals 413 and 414 denote source or drainregions. Further, the TFT shown in FIG. 4 has LDD regions 423 and 424between a channel formation region and the source or drain regions.

A base insulating film 411 (here, a lower layer thereof is a nitrideinsulating film and an upper layer thereof is an oxide insulating film)is formed over the substrate 410, and a gate insulating film 412 isprovided between a gate electrode 415 and a semiconductor layer. Inaddition, a side face of the gate electrode 415 is provided with asidewall 422. Further, a reference numeral 416 denotes an interlayerinsulating film formed with a single layer of an inorganic material suchas silicon oxide, silicon nitride, silicon nitride oxide, aluminumnitride, or aluminum nitride oxide, or a laminated layer thereof.

By providing the buffer layer 420 a on the first electrode layer, adistance between the first electrode layer and a second electrode layer421 in a memory element can be increased, and initial failure due to ashort circuit of the memory element caused by surface unevenness of ametal electrode, or the like can be suppressed. In the case where thesecond layer 418 b of the first electrode layer and the organic compoundlayer 420 b have poor adhesion to each other, the buffer layer 420 a canimprove adhesion when provided between these layers.

The organic compound layer 420 b as the second layer is formed with asingle-layer or laminated structure of a layer formed of an organiccompound material having conductivity. As a specific example of theorganic compound material having conductivity, a material having acarrier transport property can be used.

Note that if there is no particular necessity, the buffer layer 420 aneed not necessarily be provided.

This embodiment mode can be freely combined with Embodiment Mode 1.

Embodiment Mode 5

In this embodiment mode, an example of a memory device, which has astructure partly different from that in Embodiment Mode 4, is shown inFIG. 5.

An example of removing part of a third layer of a first electrode layeris described in Embodiment Mode 4, whereas an example where the numberof laminated layers in a first electrode layer is four and a fourthlayer and a third layer are partly removed is described in thisembodiment mode.

The structure shown in FIG. 5 has a first region where part of the firstelectrode layer is thinner due to etching, and the first region is incontact with a laminated layer containing an organic compound (a bufferlayer 520 a and an organic compound layer 520 b) of a memory cell. Aninsulating film 519 is provided at the boundary between adjacent memorycells to surround and cover the periphery of the first electrode layer.

A first electrode layer including layers 518 a to 518 d is a conductivelayer forming a bit line of a memory element. The first electrode layerincluding the layers 518 a to 518 d has a first region with two layers518 a, 518 b, a second region with four layers 518 a to 518 d, and astep at the boundary between the first region and the second region.Here, a titanium nitride film as the layer 518 a, a titanium film as thelayer 518 b, a film containing aluminum as its main component as thelayer 518 c, and a titanium film as the layer 518 d are sequentiallylaminated.

In the structure shown in FIG. 5, the step at the boundary between thefirst region and the second region is also covered with the insulatingfilm 519.

In addition, a source line including layers 517 a to 517 d is alsoformed with the same laminated structure (four layers in total). Thelaminated structure (four layers in total) includes a film containingaluminum as its main component, which can serve as a low-resistancewiring, and a connection wiring including layers 525 a to 525 d of aconnection portion is also formed at the same time.

Note that in FIG. 5, a TFT (n-channel TFT or p-channel TFT) providedover a substrate 510 having an insulating surface is an element forcontrolling a current flowing to the organic compound layer 520 b of thememory cell, and reference numerals 513 and 514 denote source or drainregions. Further, the TFT shown in FIG. 5 has LDD regions 523 and 524between a channel formation region and the source or drain regions.

A base insulating film 511 (here, a lower layer thereof is a nitrideinsulating film and an upper layer thereof is an oxide insulating film)is formed over the substrate 510, and a gate insulating film 512 isprovided between a gate electrode 515 and a semiconductor layer. Inaddition, a side face of the gate electrode 515 is provided with asidewall 522. Further, a reference numeral 516 denotes an interlayerinsulating film formed with a single layer of an inorganic material suchas silicon oxide, silicon nitride, silicon nitride oxide, aluminumnitride, or aluminum nitride oxide, or a laminated layer thereof.

By providing the buffer layer 520 a on the first electrode layer, adistance between the first electrode layer and a second electrode layer521 in a memory element can be increased, and initial failure due to ashort circuit of the memory element caused by surface unevenness of ametal electrode, or the like can be suppressed. In the case where thesecond layer 518 b of the first electrode layer and the organic compoundlayer 520 b have poor adhesion to each other, the buffer layer 520 a canimprove adhesion when provided between these layers.

The organic compound layer 520 b as the second layer is formed with asingle-layer or laminated structure of a layer formed of an organiccompound material having conductivity. As a specific example of theorganic compound material having conductivity, a material having acarrier transport property can be used.

Note that if there is no particular necessity, the buffer layer 520 aneed not necessarily be provided.

This embodiment mode can be freely combined with Embodiment Mode 1.

Embodiment Mode 6

In this embodiment mode, one example of a structure of an organic memoryis described below. FIG. 6A shows one example of a structure of anorganic memory to be described in this embodiment mode, which includes amemory cell array 1222 in which memory cells 1221 are arranged inmatrix; a bit line driver circuit 1226 including a column decoder 1226a, a read circuit 1226 b, and a selector 1226 c; a word line drivercircuit 1224 including a row decoder 1224 a and a level shifter 1224 b;and an interface 1223 which has a write circuit and the like andinteracts with the outside. Note that the structure of a memory device1216 described here is merely one example. Another circuit such as asense amplifier, an output circuit, or a buffer may be included therein,and the write circuit may be provided in the bit line driver circuit.

The memory cell 1221 has a first wire 1231 forming a word line Wy(1≦y≦n), a second wire 1232 forming a bit line Bx (1≦x≦m), a transistor1240, and a memory element 1241. The memory element 1241 has a structurein which an organic compound layer is interposed between a pair ofconductive layers.

One example of a top surface structure of the memory cell array 1222 isshown in FIG. 6B.

In the memory cell array 1222, the first wire 1231 which extends in afirst direction and the second wire 1232 which extends in a seconddirection perpendicular to the first direction are provided in matrix.The first wire is connected to a source or drain electrode of thetransistor 1240, and the second wire is connected to a gate electrode ofthe transistor 1240. Further, a first electrode layer 1243 is connectedto a source or drain electrode of the transistor 1240, to which thefirst wire is not connected, and a memory element is formed with alaminated structure of the first electrode layer 1243, the organiccompound layer, and a second conductive layer.

This embodiment mode can be freely combined with any one of EmbodimentModes 1 to 5.

Embodiment Mode 7

In this embodiment mode, a method for manufacturing an organic memoryincluding an antenna is explained with reference to FIG. 7. Note thatFIG. 7 shows an example of using the memory element portion and theconnection portion described in Embodiment Mode 1, and the same part asthat in FIG. 1 is denoted by the same reference numeral.

Note that FIG. 7 shows an integrated circuit portion such as a bit linedriver circuit and an antenna in addition to the memory element portionand the connection portion.

First, a peeling layer (also referred to as a separation layer) isformed over a glass substrate, and a base insulating film 11 is formed.Then, a plurality of transistors serving as switching elements of thememory element portion and an n-channel TFT 27 and a p-channel TFT 26included in a CMOS circuit of the integrated circuit portion are formedover the base insulating film. Note that in this embodiment mode, one ofa source electrode and a drain electrode of each transistor provided inthe memory element portion has a function as a first electrode layerincluding layers 18 a to 18 c. The first electrode layer including thelayers 18 a to 18 c can be formed using a vapor deposition method, asputtering method, a CVD method, a droplet discharge method, a spincoating method, or various printing methods such as screen printing andgravure printing.

In addition, a connection electrode 28 to be connected to an antennaformed in a subsequent step is also formed in the same step as the firstconductive layer including the layers 18 a to 18 c.

Subsequently, an insulating film 19 is formed to cover an end portion ofthe first electrode layer including the layers 18 a to 18 c. Inaddition, the insulating film 19 is also formed to cover the n-channelTFT 27 and the p-channel TFT 26 of the integrated circuit portion. Theinsulating film 19 can be formed using a droplet discharge method, aprinting method, or a spin coating method. If necessary, the insulatingfilm 19 is formed into a desired shape by patterning.

Next, a buffer layer 20 a and a layer 20 b containing an organiccompound are formed over the first electrode layer including the layers18 a to 18 c. Note that the buffer layer 20 a and the layer 20 bcontaining an organic compound may be entirely formed, or selectivelyformed so that the organic compound layers provided in respective memorycells are separated from each other.

Subsequently, a second conductive layer 21 is formed over the layer 20 bcontaining an organic compound. The second conductive layer 21 can beformed using a vapor deposition method, a sputtering method, a CVDmethod, a droplet discharge method, a spin coating method, or variousprinting methods such as screen printing and gravure printing in thesame manner as the first conductive layer. A memory element is formedwith a laminated structure of at least the first conductive layerincluding the layers 18 a to 18 c, the layer 20 b containing an organiccompound, and the second conductive layer 21.

In the integrated circuit portion, an electrode 29 is formed in the samestep as the second conductive layer 21. The electrode 29 is electricallyconnected to the connection electrode provided in an antenna connectionportion. In addition, the electrode 29 can improve adhesion between anantenna to be formed later and the insulating film 19.

Then, an antenna 30 is formed over the electrode 29. Here, the casewhere the antenna 30 is provided over the insulating film 19 isdescribed; however, the invention is not limited to this structure. Theantenna can be provided below the first conductive layer including thelayers 18 a to 18 c or on the same layer.

Note that there are two ways of providing an antenna used for datatransmission. One is to provide an antenna over a substrate providedwith a plurality of elements and memory elements; the other is to form aterminal portion over a substrate provided with a plurality of elementsand memory elements and connect an antenna provided over anothersubstrate to the terminal portion.

Subsequently, the memory element portion including a plurality of memoryelements, the connection portion, the integrated circuit portion, andthe antenna connection portion, which are provided over the peelinglayer, are completely peeled off from the glass substrate. Then, aflexible substrate 32 is attached to the exposed base insulating film 11with an adhesive layer 31. A cross-sectional view at the stage afterthis step is completed corresponds to FIG. 7.

The flexible substrate 32 corresponds to a laminated film of a film madeof polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride,or the like, paper made of a fibrous material, or a base-material film(polyester, polyamide, an inorganic deposited film, paper, or the like)and an adhesive synthetic resin film (an acrylic synthetic resin, anepoxy synthetic resin, or the like), or the like. As the adhesive layer31, various types of curing adhesives can be given, for example, areactive curing adhesive, a thermosetting adhesive, a photo-curingadhesive such as a UV curable adhesive, an anaerobic adhesive, and thelike.

An insulating layer serving as a protective layer may be formed by amethod such as an SOG method or a droplet discharge method so as tocover the antenna 30. The insulating layer serving as a protective layermay be formed of a layer containing carbon such as DLC (Diamond-LikeCarbon), a layer containing silicon nitride, a layer containing siliconnitride oxide, or an organic material, preferably, an epoxy resin.

A peeling method and a transfer method are not particularly limited. Forexample, a surface of a side on which the antenna is provided may beattached to a first substratum and the glass substrate is completelypeeled off. Subsequently, the exposed surface of the base insulatingfilm 11 may be fixed to the flexible substrate 32 that is a secondsubstratum with the adhesive layer 31. In this case, either or both heattreatment and pressure treatment may be performed thereafter to seal thememory element portion with the first substratum and the secondsubstratum.

Note that the peeling layer is formed by a method such as a sputteringmethod or a plasma CVD method with a single layer or laminated layer ofa layer formed of an element selected from tungsten (W), molybdenum(Mo), titanium (Ti), tantalum (Ta), niobium (Nd), nickel (Ni), cobalt(Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), lead(Pd), osmium (Os), iridium (Ir), and silicon (Si) or an alloy orcompound material containing the element as its main component. Acrystal structure of a layer containing silicon may be any of amorphous,microcrystalline, and polycrystalline structures.

In the case where the peeling layer has a single-layer structure, atungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is formed, for example. Alternatively, a layercontaining oxide or oxynitride of tungsten, a layer containing oxide oroxynitride of molybdenum, or a layer containing oxide or oxynitride of amixture of tungsten and molybdenum is formed. Note that the mixture oftungsten and molybdenum corresponds, for example, to an alloy oftungsten and molybdenum. In addition, oxide of tungsten is referred toas tungsten oxide in some cases.

In the case where the peeling layer has a laminated structure, atungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is formed as a first layer, and a layercontaining oxide, nitride, oxyntride, or nitride oxide of tungsten,molybdenum, or a mixture of tungsten and molybdenum is formed as asecond layer.

In the case where a tungsten layer is provided as the peeling layer, byapplying mechanical force after forming the base insulating film and theelement over the peeling layer, the substrate and the base insulatingfilm can be separated from each other within the peeling layer or at theinterface therebetween.

In the case where the peeling layer is removed by etching, it ispreferable to form an opening to reach the peeling layer by etching theinsulating film using a photolithography method.

Note that in the case of forming a laminated structure of a layercontaining tungsten and a layer containing oxide of tungsten, the factthat a layer containing oxide of tungsten is formed at the interfacebetween a tungsten layer and a silicon oxide layer by forming the layercontaining tungsten and the layer containing silicon oxide thereover,may be utilized. This applies to the case of forming layers containingnitride, oxynitride, and nitride oxide of tungsten. After forming alayer containing tungsten, a silicon nitride layer, a silicon oxynitridelayer, and a silicon nitride oxide layer may be formed thereover. Oxideof tungsten is expressed as WO_(X). X is 2 to 3, and there are caseswhere X is 2 (WO₂), X is 2.5 (W₂O₅), X is 2.75 (W₄O₁₁), X is 3 (WO₃),and the like. In forming oxide of tungsten, there is no particularlimitation on the above given value of X, and it may be determined whichoxide is formed, based on an etching rate or the like. Note that thatwhich has the best etching rate is a layer containing oxide of tungsten(WO_(X), 0≦x≦3) formed by a sputtering method in an oxygen atmosphere.Accordingly, it is preferable to form a layer containing oxide oftungsten as the peeling layer by a sputtering method in an oxygenatmosphere for the sake of reduction in manufacturing time.

Alternatively, another peeling method may be used, in which amorphoussilicon (or polysilicon) is used for a peeling layer and a gap isgenerated by releasing hydrogen contained in the amorphous silicon bylaser light irradiation to separate the substrate.

In accordance with the above steps, a semiconductor device including amemory element portion and an antenna can be manufactured. In addition,in accordance with the above steps, a flexible semiconductor device canbe obtained.

Further, mass production of the semiconductor device including a memoryelement portion and an antenna becomes possible by using a large-sizedsubstrate (having a size of, for example, 680×880 mm, 730×920 mm, orlarger). Note that in the case of forming a large number ofsemiconductor devices over one substrate, a separately dividing stepbecomes necessary.

This embodiment mode can be freely combined with any one of EmbodimentModes 1 to 6.

Embodiment Mode 8

In this embodiment mode, the case of using a semiconductor device of theinvention as a wireless chip which can transmit and receive data withoutcontact is explained with reference to FIGS. 8A to 8C.

A wireless chip 1310 has a function of communicating data withoutcontact, and includes a power source circuit 1301, a clock generatorcircuit 1302, a data demodulation/modulation circuit 1303, a controlcircuit 1304 for controlling another circuit, an interface circuit 1305,a memory 1306, a data bus 1307, and an antenna (an antenna coil) 1308(FIG. 8A).

The power source circuit 1301 is a circuit for generating a variety ofpower sources which are to be supplied to the respective circuits insidethe semiconductor device, based on an AC signal inputted from theantenna 1308. The clock generator circuit 1302 is a circuit forgenerating various clock signals to be supplied to the respectivecircuits inside the semiconductor device, based on an AC signal inputtedfrom the antenna 1308. The data demodulation/modulation circuit 1303 hasa function of demodulating/modulating data which are communicated with areader/writer 1309. The control circuit 1304 has a function ofcontrolling the memory 1306. The antenna 1308 has a function oftransmitting and receiving an electromagnetic field or electric wave.The reader/writer 1309 controls processing regarding communication withthe semiconductor device, control of the semiconductor device, and datathereof.

The memory 1306 is formed with any of the structures of the organicmemories described in Embodiment Modes 1 to 5. Note that a structure ofthe wireless chip is not limited to the above structure. For example, astructure with another component such as a limiter circuit for powersource voltage or hardware dedicated to cryptographic processing may beused.

In addition, the wireless chip may supply a power source voltage to eachcircuit by an electric wave without a power source (battery) mountedthereon, by a power source (battery) mounted thereon in place of anantenna, or by an electric wave and a power source (battery).

In the case of using the semiconductor device of the invention as awireless chip or the like, there are advantages in that communication isperformed without contact, plural pieces of data can be read, data canbe written in the wireless chip, the wireless chip can be processed intovarious shapes, the wireless chip has a wide directional characteristicand a wide recognition range depending on a frequency to be selected,and the like. The wireless chip can be applied to an IC tag with whichindividual information on persons and goods can be identified bywireless communication without contact, a label that can be attached toan object by performing labeling treatment, a wristband for an event oran amusement, or the like. Further, the wireless chip may be shaped byusing a resin material, or may be directly fixed to metal that hinderswireless communication. Moreover, the wireless chip can be utilized forsystem operation such as an entrance/exit management system and anaccount system.

Subsequently, one mode of practical use of a semiconductor device as awireless chip is explained. A side face of a portable terminal includinga display portion 1321 is provided with a reader/writer 1320, and a sideface of an article 1322 is provided with a wireless chip 1323 (FIG. 8B).

When the reader/writer 1320 is held over the wireless chip 1323 includedin the article 1322, information on the article 1322 such as a rawmaterial, the place of origin, an inspection result in each productionprocess, the history of distribution, or an explanation of the articleis displayed on the display portion 1321. If the wireless chip is formedover a flexible substrate, the wireless chip can be attached to a curvedsurface of a product, which is convenient.

Further, when a product 1326 is transported by a conveyor belt, theproduct 1326 can be inspected using a reader/writer 1324 and a wirelesschip 1325 provided over the product 1326 (FIG. 8C). Thus, by utilizing awireless chip for a system, information can be acquired easily, andimprovement in functionality and added value of the system can beachieved.

Note that the wireless chip of the invention can be mounted on papermoney, coins, securities, certificates, bearer bonds, packingcontainers, books, recording media, personal belongings, vehicles, food,clothing, health products, commodities, medicine, electronic devices,and the like.

This embodiment mode can be freely combined with any one of EmbodimentModes 1 to 7.

The present invention can reduce the number of steps in mass-producing asemiconductor device including an organic memory. Further, asemiconductor device including an organic memory can be mass-producedusing a large-sized substrate of 680×880 mm, 730×920 mm, or larger.

1. A memory device over a substrate, the memory device comprising: afirst line extending in a first direction; a second line extending in asecond direction perpendicular to the first direction; and a memory cellprovided at an intersection of the first line and the second line, thememory cell including a memory element and a thin film transistor,wherein the memory element includes a laminated structure of a firstconductive layer, an organic compound layer, and a second conductivelayer, wherein the organic compound layer and the first conductive layerare in contact with each other, wherein an interface between the organiccompound layer and the first conductive layer consists of a plane whichis parallel to a surface of the substrate, wherein the first line isdirectly and electrically connected to a gate of the thin filmtransistor, wherein the second line is directly and electricallyconnected to a source region of a semiconductor layer of the thin filmtransistor, wherein the first conductive layer extends to and is indirect contact with a drain region of the semiconductor layer of thethin film transistor, and wherein the organic compound layer comprises abuffer layer comprising an organic compound and a metal oxide.
 2. Amemory device according to claim 1, wherein the first conductive layerincludes at least one selected from the group consisting of Ti, Al, Ag,Ni, W, Ta, Nb, Cr, Pt, Zn, Sn, In, and Mo.
 3. A memory device accordingto claim 1, wherein the first conductive layer includes an alloy or acompound material containing at least one selected from the groupconsisting of Ti, Al, Ag, Ni, W, Ta, Nb, Cr, Pt, Zn, Sn, In, and Mo as amain component.
 4. A memory device according to claim 1, wherein thememory device further comprises a control circuit for controlling thememory element and an antenna.
 5. A memory device over a substrate, thememory device comprising: a first line extending in a first direction; asecond line extending in a second direction perpendicular to the firstdirection; and a memory cell provided at an intersection of the firstline and the second line, the memory cell including a memory element anda thin film transistor, wherein the memory element includes a laminatedstructure of a first conductive layer, an organic compound layer, and asecond conductive layer, wherein the organic compound layer and thefirst conductive layer are in contact with each other, wherein aninterface between the organic compound layer and the first conductivelayer consists of a plane which is parallel to a surface of thesubstrate, wherein the first line is directly and electrically connectedto a gate of the thin film transistor, wherein the second line isdirectly and electrically connected to a source region of asemiconductor layer of the thin film transistor, wherein the firstconductive layer extends to and is in direct contact with a drain regionof the semiconductor layer of the thin film transistor, wherein thefirst conductive layer includes a first region where two metal films arelaminated and a second region where three metal films are laminated,wherein the interface is located on and within the first region, andwherein the organic compound layer comprises a buffer layer comprisingan organic compound and a metal oxide.
 6. A memory device according toclaim 5, wherein the first conductive layer includes at least oneselected from the group consisting of Ti, Al, Ag, Ni, W, Ta, Nb, Cr, Pt,Zn, Sn, In, and Mo.
 7. A memory device according to claim 5, wherein thefirst conductive layer includes an alloy or a compound materialcontaining at least one selected from the group consisting of Ti, Al,Ag, Ni, W, Ta, Nb, Cr, Pt, Zn, Sn, In, and Mo as a main component.
 8. Amemory device according to claim 5, wherein the metal oxide ismolybdenum oxide.
 9. A memory device according to claim 5, wherein thememory device further comprises a control circuit for controlling thememory element and an antenna.
 10. A memory device according to claim 1,wherein the organic compound layer comprises an organic compound havingconductivity.
 11. A memory device according to claim 5, wherein theorganic compound layer comprises an organic compound havingconductivity.
 12. A memory device according to claim 1, wherein theorganic compound layer comprises an organic compound having a carriertransport property.
 13. A memory device according to claim 5, whereinthe organic compound layer comprises an organic compound having acarrier transport property.
 14. A memory device according to claim 1,wherein the metal oxide is molybdenum oxide.